The role of silver nanoparticles in performance of multi-quantum well double heterojunction InGaN/GaN solar cells

In this paper, we have used an analytical method for modeling a nitride-based p-i-n solar cell and considered the role of implanting randomly distributed Silver nanoparticles into the active layer employing spectral density function based effective medium theory. It has been shown that an optimum condition for harvesting maximum photon absorption that depends on nanoparticle filling fraction. Besides, we have studied the effect of variation of the indium content percentage of the InGaN intrinsic layer in the performance of the device. The characteristic parameters of the devices in the presence of Ag nanoparticles in optimum condition represent an enhancement from 12.7% to 36.7% in the power conversion efficiency (PCE) depending on the indium molar percentage.