Bandgap Engineering of Black Phosphorus-Based Nanostructures

被引:0
|
作者
Sibari, Anass [1 ]
Kerrami, Zineb [1 ]
Kara, Abdelkader [2 ]
Benyoussef, Abdelilah [3 ,4 ]
Mounkachi, Omar [3 ]
Benaissa, Mohammed [1 ]
机构
[1] Mohammed V Univ, Fac Sci, LaMCScI, BP 1014, Rabat, Morocco
[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[3] MAScIR Rabat, Inst Nanomat & Nanotechnol, Rabat, Morocco
[4] Hassan II Acad Sci & Technol, Rabat, Morocco
关键词
Black Phosphorus; 2D Materials; Phosphorene; Nanoribbons; Bandgap engineering; Density Functional Theory; MOBILITY;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
In this work, first-principles calculations based on Density Functional Theory (DFT) were employed in order to investigate the electronic properties of Black Phosphorus and its 2D and 1D derivatives, named Phosphorene and Phosphorene Nanoribbons (PNRs) respectively. The electronic structures of the black phosphorus-based nanostructures were firstly examined. Our results demonstrate that all dimensions behave as semiconductors except for the zigzag nanoribbons which are shown to be metals. Furthermore, we extended our study to include different strategies to engineer the bandgap of the two-dimensional phosphorene and the one-dimensional phosphorene nanoribbons either by stacking a multiple number of the phosphorene layers, exercising a tensile or compressive strain or by edge-passivating the phosphorene nanoribbons with Hydrogen. Our study reveals that the bandgaps and the electronic properties of these black phosphorus-based nanostructures are very flexible and several approaches could be adopted in order to engineer them.
引用
收藏
页码:459 / 462
页数:4
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