Impact of embedded DRAM logic devices on the semiconductor manufacturing

被引：2

作者：

Hirayama, T ^{[1
]}

Ezaki, T ^{[1
]}

Ouchi, N ^{[1
]}

机构：

[1] Sony Corp, Semicond Network Co, LSI Technol Dev Div, Proc Dev Dept, Yokohama, Kanagawa 240, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII | 2001年 / 4409卷

关键词：

D O I：

10.1117/12.438339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Processes that integrate a high-speed logic with a large-scale DRAM were developed, with the aim of giving even further distinctiveness to solutions. As such, high-performance system LSIs were realized. In addition, the need for selection of the optimal process was realized as well and incorporated it within the vision package development as based on circuit scale, required capabilities, and total costs. © 2001 SPIE.

引用

页码：12 / 22

页数：11

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