Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

被引：25
|
作者：
Pu, Haifeng [1 ]
Zhou, Qianfei [1 ]
Yue, Lan [1 ]
Zhang, Qun [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200433, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 10期
基金：
中国国家自然科学基金;
关键词：
METAL-DOPED ZNO; LOW-TEMPERATURE; HIGH-PERFORMANCE; SOL-GEL; FABRICATION;
D O I：
10.1088/0268-1242/28/10/105002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an infrared annealing method was proposed for solution-processed indium gallium zinc oxide films. The optimized IGZO thin-film transistors (TFTs) exhibited a field-effect mobility of 2.04 cm(2) (Vs)(-1), on-off current ratio of 1.52x10(6) and subthreshold swing of 0.84 V/dec. Spectroscopic analysis confirmed that the infrared irradiation could enhance the removal of organic species and dehydroxylation. The results suggest that infrared annealing method is a potential process for low-temperature preparation of solution-processed oxide semiconductor layers and dielectric layers, and can be applied to the fabrication of TFT devices.
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页数：5
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