Linearity optimization of a high power Doherty amplifier

被引：0
|
作者：
Cho, KJ [1 ]
Hwang, IH [1 ]
Kim, WJ [1 ]
Kim, JH [1 ]
Stapleton, SP [1 ]
机构：
[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada
来源：
2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年
关键词：
Doherty amplifier; linear power amplifier; post-distortion; push-pull; wideband code division multiple access (W-CDMA);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linearity of a 30 W high power Doherty amplifier is optimized using post-distortion compensation. A balanced high power Doherty amplifier using two push-pull LDMOS FETs is linearized by optimum adjustment of the peaking compensation line, shunt capacitors and gate biases. The optimized Doherty amplifier measured results for a 4-carrier WCDMA signal, achieved -43 dBc ACLR at a +/- 5 MHz offset frequency. This is an ACLR improvement of 12.2 dB and 6.5 dB in comparison to the Doherty amplifier before optimization and a Class AB amplifier, respectively.
引用
收藏
页码：1387 / 1390
页数：4
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