Preparation and Characterization of BaTiO3 Thin Films Using Reactive Sputtering Method with Metal Target

BaTiO3 thin films were grown on (100)MgO single crystal substrates by reactive sputtering using Ba and Ti metal targets, and optimization of deposition conditions for fabricating high-quality BaTiO3 thin films were investigated. Composition of BaTiO3 thin films was controlled by the number of Ba metal pieces. As a result, the total pressure of 20 Pa and Ba/Ti target area ratio of 0.17 was optimized for fabricating stoichiometric BaTiO3 thin film. Under this condition, BaTiO3 thin film can be crystallized at 460 degrees C. From X-ray diffraction analysis, we confirmed that the BaTiO3 thin film, which deposited under optimum conditions of deposition temperature of 460 degrees C, total pressure of 20 Pa, and Ba/ Ti target area ratio of 0.17, was epitaxially grown and had (100)/(001) single orientation. Lattice constants of the a-and c-axis were estimated to be 0.4063 and 0.4098 nm, respectively. Therefore, we concluded that it can be successful in fabricating high-quality and low damage BaTiO3 thin film deposited by reactive sputtering using a metal target at a low temperature.