High-field transport in semiconductors studied via ultrabroadband THz sampling

被引：0

作者：

Leitenstorfer, A ^{[1
]}

Hunsche, S ^{[1
]}

Shah, J ^{[1
]}

Nuss, MC ^{[1
]}

Knox, WH ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

来源：

ULTRAFAST PHENOMENA XI | 1998年 / 63卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Ultrafast carrier transport in GaAs and InP is investigated with an unprecedented time resolution of 20 fs and for electric fields up to 130 kV/cm. We provide quantitative values for the maximum velocity overshoot, depending on material and electric field. The data are in agreement with the semiclassical theory even for very high fields.

引用

页码：275 / 277

页数：3

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