High-field transport in semiconductors studied via ultrabroadband THz sampling

被引:0
|
作者
Leitenstorfer, A [1 ]
Hunsche, S [1 ]
Shah, J [1 ]
Nuss, MC [1 ]
Knox, WH [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA
来源
ULTRAFAST PHENOMENA XI | 1998年 / 63卷
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Ultrafast carrier transport in GaAs and InP is investigated with an unprecedented time resolution of 20 fs and for electric fields up to 130 kV/cm. We provide quantitative values for the maximum velocity overshoot, depending on material and electric field. The data are in agreement with the semiclassical theory even for very high fields.
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页码:275 / 277
页数:3
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