Performance Analysis of CuI as Hole Transport Layer in Perovskite (CH3NH3PbX3, X: I, Br, Cl) Solar Cell

In this paper the numerical simulation and extensive modeling have been performed on perovskite solar cell using three different perovskite material such as methyl ammonium lead tri halide (MAPbX(3), MA=CH3NH3,X:I,Br,Cl) with the help of SCAPS tool. The electrical properties of the MAPbX(3) material used as active layer have been calculated for different parameter such as open-circuit voltage (V-oc), fill factor (FF), the power conversion efficiency (PCE), and short-circuit current density (J(sc)) respectively. For all above studied perovskite solar cell, capacitance-frequency (C-f) and capacitance-voltage (C-V) characteristics have been calculated. The inorganic CuI material are acting as the hole transport layer (HTL) in simulated structure of the perovskite solar cell. The simulated results shows that MAPbI(3) have better calculated parameters (FF=74.05, PCE=14%, V-oc=0.712V, J(sc)=26.55mAcm(-2)) of the structure in comparison of MAPbBr(3) and MAPbCl(3). All the above calculated parameters have been compared with the available experimental and reported values from other workers and shows good agreement with the reported values.