Conductivity of icosahedral Al-Pd-Re at ultralow temperatures

被引:37
|
作者
Rodmar, M [1 ]
Zavaliche, F
Poon, SJ
Rapp, Ö
机构
[1] Kungliga Tekniska Hgsk, Dept Solid State Phys, SE-10044 Stockholm, Sweden
[2] Univ Virginia, Dept Phys, Charlottesville, VA 22901 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 15期
关键词
D O I
10.1103/PhysRevB.60.10807
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low-temperature electrical conductivity sigma(T) has been studied for four samples of icosahedral Al70.5Pd21.0Re8.5 in the form of annealed ingots. The resistance ratios R = rho(4 K)/rho(295 K) were in the range 70-180. The overall temperature dependence of the conductivity below 1 K is stronger than for previously reported results and the conductivity is lower. Two samples were measured down to 15 mK and two down to 0.1 mK. For the latter samples sigma(T) attained constant finite values at the lowest temperatures. A variable-range-hopping mechanism is discussed. It is concluded that the conjecture for a metal-insulator transition in i-AlPdRe remains unresolved and that measurements must include temperatures below 15 mK on samples of higher residual resistance ratios to settle this problem. [S0163-1829(99)08039-X].
引用
收藏
页码:10807 / 10810
页数:4
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