Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si

被引：0

作者：

Ponchak, GE ^{[1
]}

Tentzeris, EM ^{[1
]}

Papapolymerou, J ^{[1
]}

机构：

[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

引用

页码：1723 / 1726

页数：4

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