Analysis of magnetoimpedance in amorphous wire passing through a magnetic ring
被引:3
|
作者:
Pang Hao
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h-index: 0
机构:
Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
Pang Hao
[1
]
Li Gen
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机构:
Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
Li Gen
[1
]
Wang Zan-Ji
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机构:
Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
Wang Zan-Ji
[1
]
机构:
[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
giant magnetoimpedance;
amorphous wire;
Maxwell equations;
finite element method;
D O I:
10.7498/aps.57.7194
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
A unified expression of magnetic susceptibility tensor is presented according to the magnetic-moment motion equation with Landau - Lifshitz damping term and Gilbert damping term. The application of equivalent magnetic permeability enables to transform the anisotropy problem to an isotropy one with the same electromagnetic solution in amorphous wire. By this transformation, the impedance of amorphous wire passing through an insulating or conducting magnetic ring are analyzed. Additionally, the magnetoimpedance effect in amorphous wire through a magnetic ring is simulated by the numerical analysis based on the finite element method. The results of theoretical analysis and numerical simulation, which agree with each other, indicate that the additional impedance caused by extra magnetic objects seriously reduces the magnetoimpedance change of amorphous wire and destroy the giant magnetoimpedance characteristic. Therefore, the return wire structure is proposed to diminish the additional impedance. The simulation results verified the effectiveness of this method.
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Liu, LP
Zhao, ZJ
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h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Zhao, ZJ
Huang, CX
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Huang, CX
Wu, ZM
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Wu, ZM
Yang, XL
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Liu, LP
Zhao, ZJ
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Zhao, ZJ
Huang, CX
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Huang, CX
Wu, ZM
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China
Wu, ZM
Yang, XL
论文数: 0引用数: 0
h-index: 0
机构:
E China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Ctr Funct Nanomat & Devices, Shanghai 200062, Peoples R China