Different Pixel Patterns of Si-Based Far Infrared Bolometers

被引：0
|
作者：
Juang, Feng-Renn [1 ]
Yeh, Wen-Kuan [2 ]
Chen, Wei-Chih [1 ]
Chung, Ming-Feng [1 ]
机构：
[1] Sun Yat Sen Univ, Dept Elect Engn, Guangzhou, Guangdong, Peoples R China
[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan
来源：
2017 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous silicon bolometers with different pixel patterns are investigated for far infrared detection. Devices with floating resonator structure are measured for resistances and temperature coefficient of resistance (TCR) values. The results show normal leg geometry has high TCR (similar to -4%/degrees C) and moderate resistance. Thus the pixel pattern is suitable for infrared detecting applications.
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页码：109 / 110
页数：2
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