Impact of crystallization statistics on data retention for phase change memories

被引：0
|
作者：
Redaelli, A [1 ]
Ielmini, D [1 ]
Lacaita, AL [1 ]
Pellizzer, F [1 ]
Pirovano, A [1 ]
Bez, R [1 ]
机构：
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The stochastic nature of percolation is shown as a possible issue for retention in PCM devices, due to the occurrence of unlikely crystallization events that early decrease the device resistance. Failure time dispersions at high temperatures are measured and analyzed through a crystallization Monte Carlo model. A physical insight into nucleation and growth mechanisms is thus provided and a maximum working temperature of 105 degrees C is extracted to guarantee, on large statistics, the 10 years data retention requirement for non volatile applications.
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收藏
页码：761 / 764
页数：4
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