Group III-nitride radial heterojunction nanowire light emitters

被引：0

作者：

Mastro, Michael A. ^{[1
]}

Caldwell, Josh ^{[1
]}

Twigg, Mark ^{[1
]}

Simpkins, Blake ^{[1
]}

Glembocki, Orest ^{[1
]}

Holm, Ron T. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

Kub, Fritz ^{[1
]}

Kim, Hong-Yeol ^{[2
]}

Alin, Jaehui ^{[2
]}

Kim, Jihyun ^{[2
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Korea Univ, Dept Chem & Biol Engn, Seoul, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2008年 / 9卷 / 06期

关键词：

III-nitride; Nanowire; Defect;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

引用

页码：584 / 587

页数：4

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