Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

被引：10
|
作者：
Yang, Ru-Yuan [1 ]
Chu, Cheng-Jye [2 ]
Peng, Yu-Ming [1 ]
Chueng, Hui-Ju [2 ]
机构：
[1] Natl Pingtung Univ Sci & Technol, Dept Mat Engn, Pingtung 912, Taiwan
[2] Nanmat Technol CO Ltd, Kaohsiung 811, Taiwan
来源：
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING | 2012年 / 2012卷
关键词：
OXIDE-FILMS; TEMPERATURE;
D O I：
10.1155/2012/741561
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400 degrees C and 600 degrees C in 3% H-2/97% N-2 mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380-780 nm) is 85.6%, and the best resistivity is 5 x 10(-2) Omega-cm when annealed at 600 degrees C in 3% H-2/97% N-2 mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600 degrees C in 3% H-2/97% N-2 mixtures atmosphere, causing the poor conductivity.
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页数：7
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