Effects of annealing atmosphere on the optoelectrical properties of ZnO thin films grown by atomic layer deposition

被引：4
|
作者：
Lee, Chongmu [1 ]
Park, Yeonkyu [1 ]
Park, Anna [1 ]
Kim, Choongmo [1 ]
机构：
[1] Inha Univ, Dept Adv Mat Sci & Engn, Inchon 402751, South Korea
来源：
ECO-MATERIALS PROCESSING & DESIGN VII | 2006年 / 510-511卷
关键词：
ZnO; annealing; photoluminescence; crystallinity; electrical properties;
D O I：
10.4028/www.scientific.net/MSF.510-511.670
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600 degrees C improves the crystallinity and enhances UV emission.
引用
收藏
页码：670 / 673
页数：4
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