''Direct charging'' charge device model testing of magnetoresistive recording heads

被引:0
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作者
Cheung, TO
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
摘要
This paper reports on the behavior of a magnetoresistive (MR) recording head subjected to Direct Charging Charged Device Model (DCCDM) testing of the MR sensor. The failure-threshold voltages during DCCDM testing are measured. An equivalent circuit model for the MR head with DCCDM is constructed and used in a PSPICE circuit simulation. An experimental setup is described to measure the DC breakdown voltage and current. The Scanning Electron Microscope (SEM) photographs of DCCDM damaged MR heads are also presented and analyzed.
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页码:398 / 404
页数:7
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