Wetting challenges in cleaning of high aspect ratio nano-structures

被引：12
|
作者：
Xu, XiuMei [1 ]
Vereecke, Guy [1 ]
van den Hoogen, Erik [2 ]
Smeers, Jens
Armini, Silvia [1 ]
Delande, Tinne [1 ]
Struyf, Herbert [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
[2] Katholieke Hogeschool Limburg, B-3590 Diepenbeek, Belgium
来源：
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XI | 2013年 / 195卷
关键词：
high aspect ratio structures; wetting; Cassie-Baxter; Wenzel; pattern collapse;
D O I：
10.4028/www.scientific.net/SSP.195.235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing has been a critical issue and attracted a lot of interest. On the other hand, very little attention is spent on the potential wetting issues as feature dimensions are continuously scaled down and novel materials with different wetting properties are used in new technology nodes. In this work we investigate the wettability of nano-patterned silicon substrates with different surface modifications.
引用
收藏
页码：235 / +
页数：2
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