Formation of SiC nanowhiskers by carbothermic reduction of silica with activated carbon

被引：53
|
作者：
Dhage, Sanjay [1 ,2 ]
Lee, Hyun-Choel [1 ,2 ]
Hassan, M. Shamshi [1 ,2 ]
Akhtar, M. Shaheer [1 ,2 ]
Kim, Chong-Yeal [3 ,4 ]
Sohn, Jung Min [5 ]
Kim, Ki-Ju [1 ,2 ]
Shin, Hyung-Shik [1 ,2 ]
Yang, O-Bong [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, Jeonbuk, South Korea
[2] Chonbuk Natl Univ, Solar Energy Res Ctr, Jeonju 561756, Jeonbuk, South Korea
[3] Chonbuk Natl Univ, Dept Sci Studies, Jeonju 561756, Jeonbuk, South Korea
[4] Chonbuk Natl Univ, New & Renewable Energy Ctr, Jeonju 561756, Jeonbuk, South Korea
[5] Chonbuk Natl Univ, Dept Min Resource & Energy Engn, Jeonju 561756, Jeonbuk, South Korea
来源：
MATERIALS LETTERS | 2009年 / 63卷 / 02期
关键词：
SiC; Nanowhiskers; Carbothermic reduction; SiO2; Activated carbon; CHEMICAL-VAPOR-DEPOSITION; CARBIDE; NANORODS; NANOWIRES; CATALYST; NANOSTRUCTURES; MORPHOLOGY; WHISKERS; GROWTH;
D O I：
10.1016/j.matlet.2008.09.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The silicon carbide (SiC) nanowhiskers were obtained by a carbothermic reduction of silica (SiO2) with activated carbon at 1450 degrees C. The products were characterized by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). The Sic nanowhiskers were grown as crystalline beta-SiC with the diameter ranging from 20 to 150 nm grew along (111) direction with the length up to several tens of micrometers. Yield of beta-SiC is very high with the moderate amount of un-reacted SiO2. This is the first report on the synthesis of high yield of beta-SiC by simple direct heating method. (C) 2008 Elsevier B.V. All rights reserved.
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页码：174 / 176
页数：3
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