Step well quantum cascade laser emitting at 3 THz

被引：24
|
作者：
Scalari, Giacomo [1 ]
Amanti, Maria I. [1 ]
Fischer, Milan [1 ]
Terazzi, Romain [1 ]
Walther, Christoph [1 ]
Beck, Mattias [1 ]
Faist, Jerome [1 ]
机构：
[1] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期
基金：
瑞士国家科学基金会;
关键词：
aluminium compounds; current density; gallium arsenide; III-V semiconductors; quantum cascade lasers; semiconductor quantum wells; INTERFACE ROUGHNESS; ALLOY-DISORDER; SCATTERING;
D O I：
10.1063/1.3068496
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A quantum cascade laser based on a three well active module and emitting at 3 THz is demonstrated. The optical transition is vertical in real space and localized in an Al(0.03)Ga(0.97)As quantum well. Maximum operating temperature of 123 K in pulsed mode is reported, with threshold current densities as low as 110 A/cm(2) at 10 K and 175 A/cm(2) at 100 K. High slope efficiency values testify the good internal quantum efficiency of the structure.
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页数：3
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