Charge transport in graphene doped with diatomic halogen molecules (I2, Br2) near Dirac point

被引:35
|
作者
Chu, Seung Wan [1 ]
Baek, Seung Jae [2 ]
Kim, Dong Chul [3 ]
Seo, Sunae [4 ]
Kim, Jun Sung [5 ]
Park, Yung Woo [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[2] Seoul Natl Univ, Dept Nano Sci & Technol, Suwon 443270, South Korea
[3] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway
[4] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
关键词
Halogen doped graphene; Charge transport; Mobility reduction; Resistance decrease; IMPURITY SCATTERING;
D O I
10.1016/j.synthmet.2012.06.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the transport properties of monolayer graphene doped with halogen molecules, iodine and bromine. For these doping, the charge neutrality point shifts to the hole carrier regime indicating p-type doping, and the carrier mobility is reduced. As compared to doping with other dopants, however, the reduction of the mobility is much weaker for doping with halogen molecules. Also, the minimum conductivities at the charge neutrality point are enhanced with subsequent doping for the monolayer graphene, in strong contrast to the cases with other clopants. When the graphene layer was doped selectively by covering its edge with a polymer layer, such unconventional behaviors were not observed any more. These observations can be understood that intercalated halogen molecules between the graphene layer and the underlying substrate leads to screening of charged impurities embedded in SiO2 substrate. Halogen molecules can be effective dopants for the graphene monolayer which changes the carrier concentration without significant degrading of the mobility. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1689 / 1693
页数:5
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