Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

被引：0

作者：

Nowakowski-Szkudlarek, Krzesimir ^{[1
]}

Muziol, Grzegorz ^{[1
]}

Zak, Mikolaj ^{[1
]}

Hajdel, Mateusz ^{[1
]}

Siekacz, Marcin ^{[1
]}

Feduniewicz-Zmuda, Anna ^{[1
]}

Skierbiszewski, Czeslaw ^{[1
]}

机构：

[1] Inst High Pressure Phys PAS, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

OPTICA APPLICATA | 2020年 / 50卷 / 02期

关键词：

gallium nitride; molecular beam epitaxy; contacts; OHMIC CONTACT; GAN; GALLIUM;

D O I：

10.37190/oa200215

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 mn. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 x 10(20) cm(-3).

引用

页码：323 / 330

页数：8

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