Optical gain of type II inter-sub-band quantum cascade lasers

被引:13
|
作者
Jimenez, JL
Mendez, EE [1 ]
机构
[1] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA
[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
关键词
semiconductors; heterojunctions; quantum wells; optical properties;
D O I
10.1016/S0038-1098(99)00141-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have calculated the optical gain of inter-sub-band quantum cascade lasers based on type II heterostructures such as InAs-GaSb-AlSb, using a model that includes the whole band diagram of the structure as well as the dynamics of all the processes involved. A comparison with similar calculations for conventional type I quantum cascade lasers based on the InGaAs-InAlAs heterostructure shows the theoretical superiority of type II lasers, with an optical gain more than 50% higher than that of type I lasers and a much more efficient energy conversion. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:537 / 541
页数:5
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