Physical modeling of high-speed PIN photodetectors

被引:0
|
作者
Yoder, PD [1 ]
机构
[1] Agere Syst, Murray Hill, NJ 07974 USA
关键词
D O I
10.1117/12.432601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Crucial to accurate physical modeling of photodetector operation are the concepts of charge transport, both in depleted and undepleted absorption material, and charge collection, and their relationship to terminal current. This relationship is proven to involve both microscopic aspects of charge transport as well as macroscopic contributions which are well described by lumped circuit elements. The resultant model is applied to a generic PIN photodetector structure, and the relationship between impulse response, self-induced fields, two-dimensional illumination and a novel form of bandwidth collapse is discussed.
引用
收藏
页码:499 / 510
页数:4
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