Optical slow-wave resonant modulation in electro-optic GaAs/AlGaAs modulators

被引：13
|
作者：
Shaw, N [1 ]
Stewart, WJ
Heaton, J
Wight, DR
机构：
[1] Marconi Mat Technol, Caswell NN12 8EQ, Northants, England
[2] DERA Malvern, Malvern WR14 3PS, Worcs, England
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 18期
关键词：
D O I：
10.1049/el:19991035
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of resonant optical intensity modulator has been developed by incorporating an optical slow-wave structure into a GaAs/AlGaAs Mach-Zehnder waveguide modulator. The first experimental results demonstrate improvements in the efficiency by factors of up to 2.9 at the resonant wavelength. The lowest switching voltage, V-pi, is 4.5V.
引用
收藏
页码：1557 / 1558
页数：2
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