A Physics Based Model for NBTI in p-MOSFETs

被引：0
|
作者：
Mahapatra, Souvik [1 ]
Goel, Nilesh [1 ]
Joshi, Kaustubh [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive modeling framework is proposed to explain NBTI degradation during DC stress, recovery of degradation after DC stress, and AC stress data. The framework is validated against a large body of experimental data obtained from wide variety of p-MOSFETs. Five experimental features of NBTI are identified, and explained using the proposed framework.
引用
收藏
页码：335 / 338
页数：4
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