Ultrathin, epitaxial cerium dioxide on silicon

被引：23

作者：

Flege, Jan Ingo ^{[1
]}

Kaemena, Bjoern ^{[1
]}

Hoecker, Jan ^{[1
]}

Bertram, Florian ^{[2
]}

Wollschlaeger, Joachim ^{[3
]}

Schmidt, Thomas ^{[1
]}

Falta, Jens ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

[2] Deutsch Elektronensynchrotron DESY, Photon Sci, D-22607 Hamburg, Germany

[3] Univ Osnabruck, Dept Phys, D-49069 Osnabruck, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 13期

关键词：

GATE DIELECTRICS; PHOTOELECTRON-SPECTROSCOPY; SI OXIDATION; CEO2; SI(111); SURFACES; OXIDE; DESORPTION; INTERFACE; GROWTH;

D O I：

10.1063/1.4870585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness. (C) 2014 AIP Publishing LLC.

引用

页数：4

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