The Study of silica sol with great particle size for the SiO2 dielectric CMP

被引：0

作者：

Juan, Wang ^{[1
]}

Ming, Sun ^{[1
]}

Xia, Jiang ^{[1
]}

Yan, Zhang ^{[1
]}

机构：

[1] Hebei Univ Technol, Sch Informat Engn, Tianjin 300130, Peoples R China

来源：

ADVANCES IN MATERIALS AND MATERIALS PROCESSING, PTS 1-3 | 2013年 / 652-654卷

关键词：

Chemical Mechanical Polishing; silica sols; preparation; purify;

D O I：

10.4028/www.scientific.net/AMR.652-654.2228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The most widely used Chemical Mechanical Polishing (CMP) process and most difficulty is the SiO2 dielectric CMP in ULSI. SiO2 cannot be removed by oxidation-reduction because Silicon is already quadrivalence. So we adopt water-solubility SiO2 growing directly from water which size can arrive 110 similar to 130nm to improve the polishing rate. The growth of silica sol is studied and the silica sol whose particle sizes can reach 120nm is gained.

引用

页码：2228 / 2231

页数：4

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