Ultrahigh resolution of calixarene negative resist in electron beam lithography

被引：0
|
作者：
Fujita, J
Ohnishi, Y
Ochiai, Y
Matsui, S
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来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 09期
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O59 [应用物理学];
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摘要：
A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. (C) 1996 American Institute of Physics.
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页码：1297 / 1299
页数：3
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