Influence of Defects on the Relaxation of Non-Equilibrium Domain Structure in TGS Crystals

被引：0
|
作者：
Drozhdin, S. N. [1 ]
Golitsyna, O. M. [1 ]
Nikishina, A. I. [1 ]
机构：
[1] Voronezh State Univ, Voronezh 394006, Russia
来源：
FERROELECTRICS | 2008年 / 373卷
关键词：
TGS crystals; defects; domain structure; relaxation; pyroelectric coefficient;
D O I：
10.1080/00150190802408770
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The relaxation of non-equilibrium domain structure in TGS-family crystals was studied by measurements of time dependences of the pyroelectric coefficient at different temperatures below a Curie point. Role of the impurity defects results in the different character of temperature dependences of a relaxation time and in the influence of an internal bias field that governs the domain structure evolution and determines both a sign and a value of crystal unipolarity.
引用
收藏
页码：86 / 92
页数：7
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