Supply Voltage Dependent On-Chip Single-Event Transient Pulse Shape Measurements in 90-nm Bulk CMOS Under Alpha Irradiation

被引：9

作者：

Hofbauer, Michael ^{[1
]}

Schweiger, Kurt ^{[1
]}

Zimmermann, Horst ^{[1
]}

Giesen, Ulrich ^{[2
]}

Langner, Frank ^{[2
]}

Schmid, Ulrich ^{[3
]}

Steininger, Andreas ^{[3
]}

机构：

[1] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, A-1040 Vienna, Austria

[2] PTB, Dept Ion Accelerators & Reference Radiat Fields 6, D-38116 Braunschweig, Germany

[3] Vienna Univ Technol, Inst Comp Engn, A-1040 Vienna, Austria

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期

基金：

奥地利科学基金会;

关键词：

Alpha-particle radiation; analog on-chip measurement; microbeam experiments; 90-nm CMOS; particle beams; radiation effects in devices; radiation effects in ICs; sense amplifier; single-event effects; single-event transients; supply voltage dependence; HEAVY-ION; INVERTER;

D O I：

10.1109/TNS.2013.2245679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct on-chip pulse shape measurements of single-event transients (SETs) in a single inverter in 90-nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles, and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights, widths, and shapes on the supply voltage could be observed.

引用

页码：2640 / 2646

页数：7

共 21 条

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