Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs

被引：0
|
作者：
Yee, KJ [1 ]
Lee, D
Liu, X
Dobrowolska, M
Furdyna, JK
Lee, KG
Kim, DS
Lim, YS
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[3] Seoul Natl Univ, Dept Phys, Seoul 151747, South Korea
[4] Konkuk Univ, Dept Appl Phys, Chungbuk 380701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期
关键词：
D O I：
10.1063/1.2188590
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present results on dynamic decay of coherent longitudinal-optical phonons in a low-temperature-grown GaAs. We show that the observed behavior originates from transient electron-phonon scatterings which reflect the depletion of carriers from the surface via carrier trapping and diffusion processes. The electron longitudinal-optical (LO)-phonon scattering rate of around 8.6x10(-18) ps(-1) cm(3) is obtained from the excitation density dependence of the scattering rate.
引用
收藏
页数：3
相关论文
共 50 条
12345