InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates.

被引：0

作者：

Syrkin, A. ^{[1
]}

Usikov, A. ^{[1
]}

Soukhoveev, V. ^{[1
]}

Kovalenkov, O. ^{[1
]}

Ivantsov, V. ^{[1
]}

Dmitriev, V. ^{[1
]}

Collins, C. ^{[2
]}

Readinger, E. ^{[2
]}

Shmidt, N. ^{[3
]}

Nikishin, S. ^{[4
]}

Kuryatkov, V. ^{[4
]}

Song, D. ^{[4
]}

Holtz, M. ^{[4
]}

机构：

[1] Technol & Devices Int Inc, 12214 Plum Orchard Dr, Silver Spring, MD 20904 USA

[2] US Army Res Lab, Adelphi, MD 20783 USA

[3] Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Texas Tech Univ, Lubbock, TX 79409 USA

来源：

GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphirci templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650 degrees C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

引用

页码：151 / +

页数：2

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