Effect of disorder with long-range correlation on transport in graphene nanoribbon

被引:12
|
作者
Zhang, G. P. [1 ,2 ,3 ]
Gao, M. [1 ]
Zhang, Y. Y. [4 ]
Liu, N. [5 ]
Qin, Z. J. [6 ]
Shangguan, M. H. [1 ]
机构
[1] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
[2] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
[3] US DOE, Ames Lab, Ames, IA 50011 USA
[4] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[5] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
[6] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450001, Peoples R China
基金
中国国家自然科学基金;
关键词
METAL-INSULATOR-TRANSITION; LOCALIZATION; ABSENCE; DELOCALIZATION; CONDUCTANCE; DIFFUSION; SYSTEMS; MODEL; GAS;
D O I
10.1088/0953-8984/24/23/235303
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contacts is investigated by a transfer matrix combined with Landauer's formula. The metal-insulator transition is induced by disorder in neutral AGR. Therein, the conductance is one conductance quantum for the metallic phase and exponentially decays otherwise, when the length of AGR approaches infinity and far longer than its width. Similar to the case of long-range disorder, the conductance of neutral AGR first increases and then decreases while the conductance of doped AGR monotonically decreases, as the disorder strength increases. In the presence of strong disorder, the conductivity depends monotonically and non-monotonically on the aspect ratio for heavily doped and slightly doped AGR, respectively. For edge disordered graphene nanoribbon, the conductance increases with the disorder strength of long-range correlated disordered while no delocalization exists, since the edge disorder induces localization.
引用
收藏
页数:6
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