Hotspot Location Shift in the High-Power Phosphor-Converted White Light-Emitting Diode Packages

被引：77
|
作者：
Hu, Run [1 ]
Luo, Xiaobing [1 ]
Zheng, Huai [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Thermal Packaging Lab, Wuhan 430074, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期
基金：
国家高技术研究发展计划(863计划);
关键词：
ILLUMINATION;
D O I：
10.1143/JJAP.51.09MK05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal management of high-power light-emitting diodes (LEDs) plays an important role in determining their optical properties, reliability, and lifetime. In this paper, we present a method to study the temperature field of phosphor-converted LED packages by combining the Monte Carlo optical simulation and finite element simulation together. The temperature field, including the heat generation in both LED chip and phosphor layer, are presented and analyzed. It was found that temperature increased with the increase in phosphor concentration and the hotspot location in remote phosphor-coating packages shifted with the changes in phosphor concentration, while there was no shift in direct phosphor-coating packages. It was concluded that the hotspot location in the high-power phosphor-converted white LED packages depended on phosphor concentrations as well as packaging methods. (C) 2012 The Japan Society of Applied Physics
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页数：4
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