Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

被引：11
|
作者：
Lu, L. W. [1 ,2 ]
So, C. K. [1 ]
Zhu, C. Y. [1 ]
Gu, Q. L. [1 ]
Li, C. J. [2 ]
Fung, S. [1 ]
Brauer, G. [3 ]
Anwand, W. [3 ]
Skorupa, W. [3 ]
Ling, C. C. [1 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[3] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 09期
关键词：
D O I：
10.1088/0268-1242/23/9/095028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.
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页数：6
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