Initial stages of Eu and Yb silicides films growth on Si(111) surfaces

被引：0
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作者：
Krachino, TV
Kuzmin, MV
Loginov, MV
Mittsev, MA
机构：
来源：
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST | 1996年
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T [工业技术];
学科分类号：
08 ;
摘要：
The initial stages of Yb and Eu silicides films growth on the Si(111) surface have been investigated. Their growth is shown to occur in accordance with the mechanism similar to Stranski-Krastanov mode. The growth of 3D silicides crystallites begins at elevated substrate temperature after the formation of monatomic thickness adsorbed layer is completed. The growing adsorbed layer, in the Yb case, reveals the domain structure. The desorption activation energies and surface silicides decomposition energies have been measured. The temperature limits of Eu and Yb silicides thermal stability has been found.
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页码：250 / 251
页数：2
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