Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films

被引：2

作者：

Xu, Qingyu ^{[1
]}

Wen, Zheng ^{[2
]}

Shuai, Yao ^{[3
]}

Wu, Di ^{[2
]}

Zhou, Shengqiang ^{[3
]}

Schmidt, Heidemarie ^{[3
]}

机构：

[1] Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210008, Jiangsu, Peoples R China

[3] Helmholtz Zentrum Dresden Rossendorf eV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2012年 / 25卷 / 06期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Unipolar resistive switching; Multiferroics; Chemical deposition;

D O I：

10.1007/s10948-012-1499-z

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the forming-free unipolar resistive switching effects in polycrystalline BiFe0.95Co0.05O3 films which were spin-coated on ITO/glass substrates by a chemical solution deposition method. The resistive ratio of the high resistive state (HRS) to the low resistive state (LRS) is more than 2 orders of magnitude. The conduction of the HRS is dominated by the space-charge-limited conduction mechanism, while Ohmic behavior dominates the LRS, which suggests a filamentary conduction mechanism. The oxygen vacancies are considered to play an important role in forming the conducting filaments.

引用

页码：1679 / 1682

页数：4

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