Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

被引：2

作者：

Narang, Rakhi ^{[1
]}

Saxena, Manoj ^{[2
]}

Gupta, R. S. ^{[3
]}

Gupta, Mridula ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India

[2] Univ Delhi, Dept Elect, Dean Dayal Upadhyaya Coll, New Delhi 110015, India

[3] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, Delhi 110086, India

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2013年 / 10卷 / 05期

关键词：

Analytical Model; ATLAS; Band to Band Tunneling (BTBT); Depletion Width; DG-TFET;

D O I：

10.1166/jctn.2013.2829

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work presents an analytical model for double gate tunneling field-effect transistor (DG-TFET) based on evaluation of carrier concentration in the channel region following MOS analysis and subsequent use of reverse biased p-n junction analysis to model the energy band diagram, potential and electric field in the tunneling region of an ON state TFET. The tunneling probability and generation rate has been evaluated. The impact of parameters like drain to source voltage (V-ds), gate work function and silicon film thickness has been studied on device characteristics. The analytical results are compared with the simulated results and are in good agreement.

引用

页码：1202 / 1208

页数：7

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