High Efficient Terahertz Generation Using Tilted- Pulse-Front Photoexcitation of Semiconductor Surface

被引：0
|
作者：
Avetisyan, Yu. [1 ]
Makaryan, A. [1 ]
Tonouchi, M. [2 ]
机构：
[1] Yerevan State Univ, Microwave Engn Dept, 1 Alex Manoogian, Yerevan 375025, Armenia
[2] Osaka Univ, Inst Laser Engn, 2-6 Yamadaoka, Suita, Osaka 5650871, Japan
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that photoexcitation of InAs surface with tilted-front laser pulses allows controlling the direction of terahertz emission and by that way achieving significant increase in the generated power.
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页数：2
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