High-Mobility Air-Stable Naphthalene Diimide-Based Copolymer Containing Extended π-Conjugation for n-Channel Organic Field Effect Transistors
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作者:
Kim, Ran
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Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Gyeongsang Natl Univ, RINS, Jinju 660701, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Kim, Ran
[1
,2
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Amegadze, Paul S. K.
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Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Amegadze, Paul S. K.
[3
]
Kang, Il
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Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea
Gyeongsang Natl Univ, ERI, Jinju 660701, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Kang, Il
[4
,5
]
Yun, Hui-Jun
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Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea
Gyeongsang Natl Univ, ERI, Jinju 660701, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Yun, Hui-Jun
[4
,5
]
Noh, Yong-Young
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Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Noh, Yong-Young
[3
]
Kwon, Soon-Ki
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Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea
Gyeongsang Natl Univ, ERI, Jinju 660701, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Kwon, Soon-Ki
[4
,5
]
Kim, Yun-Hi
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机构:
Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Gyeongsang Natl Univ, RINS, Jinju 660701, South KoreaGyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
Kim, Yun-Hi
[1
,2
]
机构:
[1] Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
[2] Gyeongsang Natl Univ, RINS, Jinju 660701, South Korea
[3] Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
[4] Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea
[5] Gyeongsang Natl Univ, ERI, Jinju 660701, South Korea
A high-performance naphthalene diimide (NDI)-based conjugated polymer for use as the active layer of n-channel organic field-effect transistors (OFETs) is reported. The solution-processable n-channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted-NDI and thienylene-vinylene-thienylene units (PNDI-TVT). The material has a well-controlled molecular structure with an extended -conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n-type OFET. The top-gate, bottom-contact device shows remarkably high electron charge-carrier mobility of up to 1.8 cm(2) V-1 s(-1) (I-on/I-off = 10(6)) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI-TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved - intermolecular interactions owing to the extended -conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended - backbone and long alkyl groups.
机构:
Dongguk Univ, Dept Energy Mat Engn, 30,Pildong Ro 1 Gil, Seoul 04620, South KoreaDongguk Univ, Dept Energy Mat Engn, 30,Pildong Ro 1 Gil, Seoul 04620, South Korea
Long, Dang Xuan
Choi, Eun-Young
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Korea Atom Energy Res Inst, Daedeok Daero 989-111, Daejeon 34057, South KoreaDongguk Univ, Dept Energy Mat Engn, 30,Pildong Ro 1 Gil, Seoul 04620, South Korea
Choi, Eun-Young
Noh, Yong-Young
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Dongguk Univ, Dept Energy Mat Engn, 30,Pildong Ro 1 Gil, Seoul 04620, South KoreaDongguk Univ, Dept Energy Mat Engn, 30,Pildong Ro 1 Gil, Seoul 04620, South Korea