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Sonochemical deposition of MoSx on ZnIn2S4 for photocatalytic hydrogen evolution
被引:16
|作者:
Qian, Xianhao
[1
]
Wang, Caixuan
[1
]
Jie, Hui
[1
]
Lin, Jun
[1
]
机构:
[1] Renmin Univ China, Dept Chem, Beijing 100872, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Sonochemical deposition;
Photocatalytic H-2 evolution;
MoSx/ZnIn2S4;
COCATALYST;
SPHERES;
D O I:
10.1016/j.matlet.2019.03.083
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Novel MoSx/ZnIn2S4 photocatalysts were fabricated by a facile sonochemical deposition route with (NH4)(2)MoS4 as a precursor. The 3.0 wt% MoSx/ZnIn2S4 has been shown to significantly enhance the photocatalytic performance for H-2 evolution under visible light (lambda >= 420 nm), which is 26 times higher than that of pristine ZnIn2S4.Various characterizations and further experimental results indicate that an intimate junction formed between MoSx and ZnIn2S4 via sonochemical route and the MoSx not only can promote the transfer of photo-generated electron, but also provides abundant coordinately unsaturated S atoms as active sites for H-2 evolution. This study paves a new way to design efficient semiconductor composites for photocatalytic H-2 evolution. (C) 2019 Elsevier B.V. All rights reserved.
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页码:122 / 125
页数:4
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