Porous silicon resonant cavity light emitting diodes

被引：58
|
作者：
Pavesi, L [1 ]
Guardini, R [1 ]
Mazzoleni, C [1 ]
机构：
[1] UNIV TRENT, DIPARTIMENTO FIS, I-38050 TRENT, ITALY
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 12期
关键词：
semiconductors; optical properties; electroluminescence;
D O I：
10.1016/0038-1098(95)00798-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Room temperature visible light emitting diodes based on porous silicon planar microcavities are reported. The electrical injection was provided by metal contacts (Schottky-like diode). The performance of these structures with respect to standard porous silicon LEDs is presented and discussed.
引用
收藏
页码：1051 / 1053
页数：3
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