Variable temperature electrochemical strain microscopy of Sm-doped ceria

被引：22

作者：

Kumar, Amit ^{[1
]}

Jesse, Stephen ^{[1
]}

Morozovska, Anna N. ^{[2
]}

Eliseev, Eugene ^{[3
]}

Tebano, Antonello ^{[4
,5
]}

Yang, Nan ^{[4
,5
,6
,7
]}

Kalinin, Sergei V. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine

[4] Univ Roma Tor Vergata, CNR SPIN, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, Dipartimento Ingn Civile & Ingn Informat, I-00133 Rome, Italy

[6] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy

[7] NAST Ctr, Rome, Italy

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 14期

关键词：

OXYGEN REDUCTION; ION DIFFUSION; SPACE-CHARGE; CONDUCTIVITY; SURFACE; FILMS; ENHANCEMENT; TRANSPORT; BEHAVIOR;

D O I：

10.1088/0957-4484/24/14/145401

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Variable temperature electrochemical strain microscopy has been used to study the electrochemical activity of Sm-doped ceria as a function of temperature and bias. The electrochemical strain microscopy hysteresis loops have been collected across the surface at different temperatures and the relative activity at different temperatures has been compared. The relaxation behavior of the signal at different temperatures has been also evaluated to relate kinetic process during bias induced electrochemical reactions with temperature and two different kinetic regimes have been identified. The strongly non-monotonic dependence of relaxation behavior on temperature is interpreted as evidence for water-mediated mechanisms.

引用

页数：11

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