K-Band FMCW Radar CMOS Front-End ICs with 13.3 dBm Output Power

被引:0
|
作者
Pyo, Gitae [1 ]
Yang, Jaemo [1 ]
Ku, Hyunji [1 ]
Kim, Choul-Young [2 ]
Hong, Songcheol [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
[2] Chungnam Natl Univ, Taejon, South Korea
关键词
CMOS; Frequency modulated continuous wave (FMCW); K-band; radar receiver; radar transmitter;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents CMOS front-end ICs with 13.3 dBm output power for K-band FMCW radar, which is integrated in 0.13-mu m CMOS technology. The transmitter consists of a voltage controlled oscillator, divider chain, power amplifier, and additional buffers. The receiver consists of a low-noise amplifier, IQ mixers, an IQ generator, and buffers. The leakage problem can be mitigated by adopting differential topology and ground shielding. As a result, the receiver achieves a conversion gain of 35.7 dB, a P1dB of 31.6 dBm, and a DSB noise figure of 5.5 dB. The transmitter achieves the tuning range of 23.8 similar to 24.5 GHz and the phase noise of -104 dBc/Hz @ 1MHz offset. The receiver and transmitter chips consume 121.5 mW and 373.5 mW from a 1.5 V power supply, respectively. Using these two chips, the K-band FMCW radar module is implemented and verified by measuring the distance of an object.
引用
收藏
页码:79 / 82
页数:4
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