Study of growth mechanism of self-catalytic branched GaN nanowires

被引:2
|
作者
Tan, L. K. [1 ]
Yam, F. K. [1 ]
Beh, K. P. [1 ]
Hassan, Z. [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
关键词
GaN; Nanowires; Vapor-liquid-solid; Chemical vapor deposition; Branch; STRUCTURAL-CHARACTERIZATION; RATIONAL GROWTH; SNO2; NANOWIRES; HETEROSTRUCTURES;
D O I
10.1016/j.spmi.2013.03.003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this article, we report the investigation of GaN nanowires grown by chemical vapor deposition method with the use of Fe as catalyst. Branched nanowires were accidentally found during morphological examination on the grown samples using field emission scanning electron microscope (FESEM). Our study revealed that the spontaneous production of branched GaN nanowires was not attributed to the Fe catalyst. We propose that the inducement of branched GaN nanowires was based on self-catalytic vapor-liquid-solid (VLS) growth model, in which the high concentration of Ga liquid was found to be responsible for the growth of branched nanowires. This proposed growth model was confirmed by the, collection of the elemental analysis measurement on various spots of the branched nanowires using energy dispersive X-ray spectroscopy (EDS). (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:38 / 43
页数:6
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