Magnetic and electrical properties of p-type Mn-doped CuCrO2 semiconductors

被引：40

作者：

Li, Da ^{[1
]}

Fang, Xiaodong ^{[1
]}

Dong, Weiwei ^{[1
]}

Deng, Zanhong ^{[1
]}

Tao, Ruhua ^{[1
]}

Zhou, Shu ^{[1
]}

Wang, Jinmei ^{[1
]}

Wang, Tao ^{[1
]}

Zhao, Yiping ^{[1
]}

Zhu, Xuebin ^{[2
]}

机构：

[1] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Key Lab New Thin Film Solar Cells, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 05期

关键词：

MAGNETOTRANSPORT PROPERTIES; THIN-FILMS; FERROMAGNETISM; SUBSTITUTION; CUALO2; CR;

D O I：

10.1088/0022-3727/42/5/055009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn-doped CuCrO2 polycrystalline semiconductors were synthesized by the sol-gel method. The valence state of the Mn ions in the CuCr1-xMnxO2 samples was identified as 3+ by analysing their lattice parameters, their electrical properties and their x-ray photoelectron spectra. The temperature dependence of the susceptibility of all samples exhibits paramagnetic behaviour at high temperature. For x = 0.20 the samples exhibit a clear ferromagnetic ( FM) transition at 120 K. Clear hysteresis loops indicate that FM order exists in the Mn-doped samples at 50 K. All samples behave like semiconductors. The electrical and magnetic properties indicate that the ferromagnetism can be attributed to the double exchange interaction between the Mn3+ and Cr3+ in CuCr1-xMnxO2 semiconductors.

引用

页数：6

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