Investigation of Rapid Thermal Annealing on Cu2O Properties and n-p Cu2O Homojunction Performance by Electrochemical Deposition Processing

In this study, p-type Cu2O (p-Cu2O), n-type Cu2O (n-Cu2O), and n-p Cu2O homojunction films produced by electrochemical deposition (ECD) and rapid thermal annealing (RTA) processing was characterized. The Cu2O films were fabricated by ECD methods and characterized before and after RTA treatments using several analytical tests. Results showed that the properties of the Cu2O films, including crystalline, morphological and electrical properties, were greatly influenced by different RTA temperatures. The grain and particle sizes, and conductivity of the p-and n-Cu2O films substantially increased with RTA treatment at 350 degrees C. Additionally, the films annealed at 350 degrees C were estimated to have the highest mobility. Samples of n-p Cu2O homojunction diodes were produced by n-Cu2O with or without RTA treatment, followed by p-Cu2O deposition. The effect of RTA treatment on diode performance was evaluated by conducting the current-voltage (I-V) tests and explained according to the results of the treated films. (C) 2016 The Electrochemical Society. All rights reserved.