Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

被引：18
|
作者：
Harada, C [1 ]
Ko, HJ [1 ]
Makino, H [1 ]
Yao, T [1 ]
机构：
[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 5-6期
关键词：
MgZnO; Ga doping; phase separation; P-MBE;
D O I：
10.1016/j.mssp.2003.08.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the phase separation of Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy. Based on X-ray diffraction, low-temperature (10 K) photoluminescence, and reflection high-energy electron diffraction observations, it is possible to classify the phase of Ga-doped MgZnO layers into three regions depending on the incorporated Ga concentration ([Ga]). Single-phase Mg0.1Zn0.9O layers are grown when [Ga] is less than I x 10(18) cm(-3). For [Ga] between I X 10(18) cm(-3) and I X 10(20) cm(-3), ZnO and Mg0.2Zn0.8O coexist, where electron transport is considered to be via two-channel conduction. When [Ga] exceeds I X 10(20) cm(-3), the Ga-doped MgZnO layers become polycrystalline, where carrier compensation takes place presumably due to grain boundaries. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：539 / 541
页数：3
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