Plastic deformation of MoSi2 and WSI2 single crystals and directionally solidified MoSi2-based alloys

被引：32
|
作者：
Ito, K
Yano, T
Nakamoto, T
Inui, H
Yamaguchi, M
机构：
[1] Dept. of Mat. Sci. and Engineering, Kyoto University, Kyoto 606-01, Sakyo-ku
来源：
INTERMETALLICS | 1996年 / 4卷
关键词：
MoSi2 single crystals; MoSi2-based alloys; WSi2 single crystals; high temperature deformation; fracture toughness;
D O I：
10.1016/0966-9795(96)00030-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
MoSi2-SiC, -Mo5Si3 and -Mo(Si,AI)(2) alloys were prepared by directional solidification, and their microstructures, orientation relationships between the matrix MoSi2 and reinforcement phases and mechanical properties were investigated. Single crystals of MoSi2 and WSi2 were grown, and the slip modes and corresponding critical resolved shear stresses, their temperature and crystal orientation dependence and the decomposition and dissociation of dislocations for the two disilicides were investigated. Stacking (condensation) faults on (001) were found to exist in abundance in WSi2. Such stacking faults are shown to be formed by removing two (001) layers of silicon atoms. These results were compared with the relevant previous studies. Copyright (C) 1996 Elsevier Science Ltd
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页码：S119 / S131
页数：13
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